Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is performed down to deep cryogenic temperatures. It found that a single set mobility parameters only necessary fit the capacitance and drain current transfer characteristics versus temperature for long channel devices. In contrast, in short transistors, neutral scattering component µN decrease at small gate length due increased impact defects close source/drain ends whatever temperature. Moreover, closed-form analytical expression Coulomb has been developed, useful device compact modelling.